
Samsung M323R1GB4DB0-CWM 8GB UDIMM 288-pin Ram Module
Overview
Samsung M323R1GB4DB0-CWM is an 8 GB DDR5 unbuffered DIMM with a speed of 5600 Mbps and operates at 1.1 V. It features a 1R x 16 rank/organization, 288 pins, and is designed for systems requiring high-performance, low-latency memory.
Specifications
Model Number: M323R1GB4DB0-CWM
Brand: Samsung
Alt Part Number(s): M323R1GB4DB0-CWM
Product Type: Ram Module
Technical Description
Brand: Samsung
Model Number: M323R1GB4DB0-CWM
Memory Configuration: UDIMM (Unbuffered DIMM)
Buffering: No buffer or register (lower latency)
Supported Organization: x8 / x16
Ranks per DIMM: Up to 2 ranks
DIMM Configuration: 2DPC (2 DIMMs per Channel)
Memory Type: DDR5
Density: 8 GB
Speed: 5600 Mbps
Voltage: 1.1 V
Production Status: Mass Production
Rank x Organization: 1R x 16 (1 rank, 16-bit organization)
Component Composition: (1G x 16) x 4
Number of Pins: 288 pins
*Product descriptions, images, and part numbers are subject to change and may not accurately reflect manufacturer product alterations. For the latest and most precise information, kindly refer to the manufacturer's website and use the item's manufacturer part number.
Overview
Samsung M323R1GB4DB0-CWM is an 8 GB DDR5 unbuffered DIMM with a speed of 5600 Mbps and operates at 1.1 V. It features a 1R x 16 rank/organization, 288 pins, and is designed for systems requiring high-performance, low-latency memory.
Specifications
Model Number: M323R1GB4DB0-CWM
Brand: Samsung
Alt Part Number(s): M323R1GB4DB0-CWM
Product Type: Ram Module
Technical Description
Brand: Samsung
Model Number: M323R1GB4DB0-CWM
Memory Configuration: UDIMM (Unbuffered DIMM)
Buffering: No buffer or register (lower latency)
Supported Organization: x8 / x16
Ranks per DIMM: Up to 2 ranks
DIMM Configuration: 2DPC (2 DIMMs per Channel)
Memory Type: DDR5
Density: 8 GB
Speed: 5600 Mbps
Voltage: 1.1 V
Production Status: Mass Production
Rank x Organization: 1R x 16 (1 rank, 16-bit organization)
Component Composition: (1G x 16) x 4
Number of Pins: 288 pins
*Product descriptions, images, and part numbers are subject to change and may not accurately reflect manufacturer product alterations. For the latest and most precise information, kindly refer to the manufacturer's website and use the item's manufacturer part number.
Original: $889.00
-70%$889.00
$266.70Description
Overview
Samsung M323R1GB4DB0-CWM is an 8 GB DDR5 unbuffered DIMM with a speed of 5600 Mbps and operates at 1.1 V. It features a 1R x 16 rank/organization, 288 pins, and is designed for systems requiring high-performance, low-latency memory.
Specifications
Model Number: M323R1GB4DB0-CWM
Brand: Samsung
Alt Part Number(s): M323R1GB4DB0-CWM
Product Type: Ram Module
Technical Description
Brand: Samsung
Model Number: M323R1GB4DB0-CWM
Memory Configuration: UDIMM (Unbuffered DIMM)
Buffering: No buffer or register (lower latency)
Supported Organization: x8 / x16
Ranks per DIMM: Up to 2 ranks
DIMM Configuration: 2DPC (2 DIMMs per Channel)
Memory Type: DDR5
Density: 8 GB
Speed: 5600 Mbps
Voltage: 1.1 V
Production Status: Mass Production
Rank x Organization: 1R x 16 (1 rank, 16-bit organization)
Component Composition: (1G x 16) x 4
Number of Pins: 288 pins
*Product descriptions, images, and part numbers are subject to change and may not accurately reflect manufacturer product alterations. For the latest and most precise information, kindly refer to the manufacturer's website and use the item's manufacturer part number.











