Overview

PHISON XP20DH031T60E212T0410 Pascari X200E 1600 GB E3.S Single Port PCIe Gen5x4 Opal Security SSD

Specifications

Model Number:  XP20DH031T60E212T0410

Brand:   PHISON

Alt Part Number(s):    XP20DH031T60E212T0410

Product Type:  Solid State Drive

 

Technical Description

Brand:  PHISON

Model:  XP20DH031T60E212T0410

Capacities: 1600 GB

Form Factor: E3.S

Interface: Single Port

Security: Opal

PCIe Interface: PCIe Gen5x4

Single Port: x4 lanes

PCIe AER (Advanced Error Reporting): Yes

Maximum Sequential 128KB Read/Write (QD=32, Workers=1)(MB/s): 14,000/4,200

Maximum 4K Sustained Random Read/Write (QD=64, Workers=8)(IOPS): 2,100,000/400,000

Latency 4K Sustained Random Read/Write (µs): 60/10(QD=1, Workers=1); 85/130(QD=4, Workers=8); 260/1500(QD=64, Workers=8)

IOPS Consistency 4KB Sustained Random Read/Write: 95%/95%

4KB Sustained Random Read/Write Quality of Service (QoS=99%)(4KB): 80/12(QD=1, Workers=1); 140/130(QD=4, Workers=8); 900/1500(QD=64, Workers=8)

DWPD: 3DWPD

TBW: 8760 TB

LBAF: 512 / 512+ 8 / 4K / 4K + 8 / 4K + 64 Bytes

MTBF: 2.5 million hours

UBER (Uncorrectable Bit Error Rates): 3D NAND < 1 sector per 10^18 bits read

ECC: Yes

Static and Dynamic Wear Leveling: Yes

Bad Block Management: Yes

Deallocate (TRIM) Command: Yes

SMART: Yes

Over-Provision: Yes

Firmware Upgrade: Yes

Temperature Range Operation: 0°C - 70°C with specified airflow

Temperature Range Storage: -40°C - 85°C

RoHS Compliant: Yes

Namespace: Supported

Single Port: Supported

Reservation: Supported

Metadata Protection: Supported

Thermal Throttling: Supported

Power Loss Protection: Supported

Hardware AES-XTS 256-bit Encryption: Supported

Support SMBus: Yes

Support NVMe-MI (Management Interface): Yes

Data Retention: 3 months

Compliance: PCIe Express Base 5.0

NVMe Version: NVMe Express 2.0

NVMe Management Interface: NVMe Express Management Interface Rev 1.2

Module Specification: PCIe Express SFF-8639 Module Specification Revision 4.0, Version 1.0

Flash Configuration: 256GB x 8

Flash Type: 32CE, 512Gb, QDP

Flash Structure: 256GB x 8

Flash Type: 3D eTLC

TBW: 8760

DWPD: 3

Supply Voltage 12v: +/- 10%

12v Noise Level: 240mVp-p, 0-20MHz

12v Minimum Off Time: 500ms

3.3v Aux: +/- 15%

Inrush Current: 12v 2.5A

*Product descriptions, images, and part numbers are subject to change and may not accurately reflect manufacturer product alterations. For the latest and most precise information, kindly refer to the manufacturer's website and use the item's manufacturer part number.